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Title: Nanomechanical Properties of High-k Dielectrics Grown by Atomic Layer Deposition

Source: ECS Transactions, 11 (7) 123-130 (2007)

Author(s)Tapily, K.; Jakes, J.; Stone, D.S.; Shrestha, P.; Gu, D.; Baumgart, H.; Elmustafa, A.A.

Publication Year: 2007  View PDF »

Category: Journal Articles

Abstract: The challenges of reducing gate leakage current and dielectric breakdown beyond the 45 nm technology node has shifted engineers’ attention from SiO2 to higher dielectric constant materials also known as high-k materials such as HfO2 and Al2O3. Therefore, it is important to investigate the electrical and mechanical properties of these materials that are projected to replace SiO2. In this study, HfO2 and Al2O3 have been deposited by atomic layer deposition (ALD) on Si wafers. Using continuous stiffness method (CSM) Nanoindenter® XP, we report elastomechanical properties of HfO2 and Al2O3 on Si. HfO2 has a hardness and modulus of 9-10 ± 2 GPA and 200 ± 40 GPA respectively. In addition, the hardness and modulus of Al2O3 were determined to be respectively 10-11 ± 2 GPA and 200 ± 40 GPA.

Keywords: ECS Transactions, 11 (7) 123-130 (2007)

File size: 534 kb(s)

Date posted: 01/06/2012
Current FPL Scientist associated with this product
Jakes, Joseph
Research Materials Engineer
  

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